3DD207I transistor equivalent, silicon npn power transistor.
*Designed for auto amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
C.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
*Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 3A
APPLICATIONS
*Designed for auto amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
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TAGS
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